SBIR/STTR Research Award

Normally-OFF AlInGaN MOSHFET for power converters

Award identifier 7c8a8ae065dcec4070e5b2d1b03369cd4b41ddd5692a3ee57930b67a835aa9c6Awarding agency Department of Defense · Navy

Award amount

$69,882

Program and phase

STTR · Phase I

Award year

2009

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
Sensor Electronic Technology, Inc.
Proposal award date
2009-06-29
Contract end date
2010-04-30
UEI
ZLAMG4KBKN15
Solicitation number
2009.A
Topic code
N09-T023

Research abstract

We propose to develop and commercialize novel normally-off III-Nitride insulated gate heterostructure field effect transistor (MOSHFET) for power converters. Based on our experience in high power insulated gate III-N HFET development, we strongly believe that this device is the most promising for achieving the best combination of low ON-resistance, high operating voltage and high switching frequencies. It is also the best wide bandgap device type that allows for stable and reliable operation at required high voltage and current levels.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture

Agency intelligence

Department of Defense

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