Photonically-Controlled SiC based Device Technology for Power Electronic Applications
Award amount
$100,000Program and phase
SBIR · Phase IAward year
2009Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- Arkansas Power Electronics International, Inc.
- Proposal award date
- 2009-03-19
- Contract end date
- 2009-12-19
- UEI
- QZMVB44SHW19
- Solicitation number
- 2008.3
- Topic code
- AF083-110
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High Power Density GaN-Based Power Converters for Grid-Tied Energy Storage
- A High Efficiency, High Power Density, GaN-Based DC-DC Converter for Grid-Tied Energy Storage Applications
- Extreme Temperature Radiation Tolerant Instrumentation for Nuclear Thermal Propulsion Engines
- A Modular High Voltage (> 10 kV), High Power Density SiC Power Package for Extreme Environments
- A 300C Power Module Using Wide Bandgap Devices, Advanced Materials/Processes, and High Temperature Integrated Circuits for Geothermal Applications
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Optically Gated, Silicon Carbide (SiC) Semiconductors for Aircraft Electrical Actuator Motor Drives
- Optically Gated, Silicon Carbide (SiC) Semiconductors for Aircraft Electrical Actuator Motor Drives
- Optically Gated, Silicon Carbide Semiconductors for Aircraft Electrical Actuator Motor Drives
Research funding history
59 SBIR/STTR records share this UEI (2003–2015). Reported award amounts total $19,645,087. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation, Department of Transportation