SBIR/STTR Research Award
Ultra-Dense Three-Dimensional Electronics for Space
Award amount
$1,579,930Program and phase
SBIR · Phase IIAward year
2009Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- NHANCED SEMICONDUCTORS, INC.
- Proposal award date
- 2008-12-23
- Contract end date
- 2010-01-29
- UEI
- LATHGF1NRTC1
- Solicitation number
- 2007.3
- Topic code
- AF073-099
Research abstract
Chip-to-chip I/O has become a serious bottleneck, especially in communications between high-speed processors and their memory devices. Integrating a large amount of memory and a powerful processor into a single 3D-IC device could alleviate this problem. Bringing the memory on-chip with a very wide bus and very short vertical interconnects would greatly increase the speed and frequency of I/O between the processor and memory. Designing and optimizing such a device would be a large and expensive undertaking. The proposed program looks to examine the 3D solution in a limited scenario, making minimal changes to an existing memory design and an existing CPU. This will not fully exploit the huge performance benefits of 3D CPU+memory integration, but it will provide a valuable proof-of-concept for future work. BENEFIT: The benefit of this project will be the demostration of technology that will fundamentally change the way compute engines are designed. The provision of large fast memories that function as a direct extension of the data processing silicon has direct commercial application and indeed will enable the next major stride in data processing.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- CMOS Integrated With Float Zone Pixel Sensor
- Micro-Transfer-Printing Of Repeaters On Passive Interposer
- Energy-Efficient Reconfigurable Universal Accelerator Interconnect
- CMOS Integrated With Float Zone Pixel Sensor
- A New Cost-Effective Engineered Substrate