SBIR/STTR Research Award

Ultra-Dense Three-Dimensional Electronics for Space

Award identifier 1fd551dd1e25265a47179f9eadba03ce28403d0ad2e084a74171ddc863b393e6Awarding agency Department of Defense · Air Force

Award amount

$1,579,930

Program and phase

SBIR · Phase II

Award year

2009

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
NHANCED SEMICONDUCTORS, INC.
Proposal award date
2008-12-23
Contract end date
2010-01-29
UEI
LATHGF1NRTC1
Solicitation number
2007.3
Topic code
AF073-099

Research abstract

Chip-to-chip I/O has become a serious bottleneck, especially in communications between high-speed processors and their memory devices. Integrating a large amount of memory and a powerful processor into a single 3D-IC device could alleviate this problem. Bringing the memory on-chip with a very wide bus and very short vertical interconnects would greatly increase the speed and frequency of I/O between the processor and memory. Designing and optimizing such a device would be a large and expensive undertaking. The proposed program looks to examine the 3D solution in a limited scenario, making minimal changes to an existing memory design and an existing CPU. This will not fully exploit the huge performance benefits of 3D CPU+memory integration, but it will provide a valuable proof-of-concept for future work. BENEFIT: The benefit of this project will be the demostration of technology that will fundamentally change the way compute engines are designed. The provision of large fast memories that function as a direct extension of the data processing silicon has direct commercial application and indeed will enable the next major stride in data processing.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Agency intelligence

Department of Defense

Back to SBIR/STTR Research Awards

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