High Coefficient of Performance Quantum Well Thermoelectric Nano Cooler

Hi-Z Technology, Inc. has developed nanotechnology quantum well (QW) thermoelectric materials that have high Figures of Merit and can attain very high coefficients of performance (COP) to exceed the Army’s objective for cooling room temperature detectors. With the new Si/SiGe QW materials, cooling systems can be fabricated that are much smaller, quieter, light weight, and have much reduced power requirements than current thermoelectric materials or presently used mechanical equipment. In Phase I nanocomposite QW films (10 nm) were fabricated and it was demonstrated that Si/SiGe QW materials can be deposited on a low thermal conductivity substrate and that the predicted COPs will exceed the Army goals by a large margin over the temperature range from 250K to 350K in a single-stage nanocooler. The QW thermoelectric properties that lead to these high COPs were independently verified by UCSD and NIST. In the Phase I Option, Si/SiGe QW couples will be fabricated and tested to establish the basic structure for scale-up in Phase II for use in Army and commercial applications. In Phase II, QW nanocoolers will be designed, fabricated and tested to demonstrate that they satisfy the objectives of the program. Two designs will be built for cooling to 280K and 250K against a 350K heat sink temperature.