High Coefficient of Performance Quantum Well Thermoelectric Nano Cooler

Hi-Z Technology, Inc. has developed nanotechnology quantum well thermoelectric materials that have high Figures of Merit and can attain very high coefficients of performance (COP) to exceed the Army’s objective for cooling room temperature detectors. Hi-Z’s Si/SiGe solid state quantum well thermoelectric materials have demonstrated a Seebeck coefficient that provides >4X voltage of current thermoelectric materials and thermoelectric properties that optimize COP in the required temperature range from 250K to 350K. With the new Si/SiGe quantum well materials, cooling systems can be fabricated that are much smaller, quieter, light weight, and have much reduced power requirements than current thermoelectric materials or presently used mechanical equipment. On-going funded development for these new quantum well thermoelectric materials by DOE and DOD has demonstrated high efficiency thermoelectric materials for power applications. Now, cooling devices to meet the Army's requirements are feasible and will be developed through this proposal. In Phase I nanocomposite quantum well films (100 Angstroms) will be fabricated to demonstrate that Si/SiGe quantum well materials can be deposited on a low thermal conductivity substrate and provide at least the desired COP over the temperature range from 250K to 350K. In Phase I Option, Si/SiGe quantum well couples will be fabricated and tested to establish the basic structure for scale-up in Phase II for use in Army and commercial applications.