GaN/AlGaN/AlInN Based THz Focal Plane Array Detectors, Ultraviolet (UV) Lasers, and HEMT High Power RF Devices on Low-Dislocation AlN and GaN Substra

This STTR Phase I project will demonstrate the feasibility of making deep ultraviolet laser diodes (UV LDs) based on very low defect AlN substrates cut from bulk crystals. The target wavelength will be 280nm or shorter which requires high aluminum content AlxGa1-xN semiconductor alloy layers. During the Phase I, the effort will demonstrate an n-type AlxGa1 xN layer with low resistivity and low threading dislocation density as a result of growing a pseudomorphic (i.e., coherently strained to match the substrate lattice parameter) AlxGa1-xN layers on a very low defect, single-crystal AlN substrate. Also, design approaches for improving the IQE at high current densities will be developed. These results will be used to enable the demonstration of a 280nm laser diode in a Phase II effort. BENEFIT: The project is targeted at developing deep ultraviolet (Ć<280nm) laser diodes. These laser diodes will have DoD application for compact, rugged bioagent sensors as well as application in covert communication. Commercial applications are anticipated in the areas analytical instrumentation and high density data storage. While the project is focused on laser diode development, the technology is also expected to lead to dramatic improvements in the efficiency and brightness of deep ultraviolet light emitting diodes (UV LEDs) which will have broad application in water, air, and surface disinfection as well as commercial applications in manufacturing processes such as epoxy curing. Cost-effective, large diameter, single-crystal aluminum nitride (AlN) substrates are poised to make possible these dramatic improvements in deep UV emitter technology.