AlInN Lattice Matched Barrier HEMTs on Low Defect Bulk and Quasi-Bulk III-Nitride Substrates

The goal of the Phase I program is to demonstrate the feasibility of our technical approach to grow AlInN lattice Matched Barrier HEMTs on low defect Bulk and quasi-bulk III-Nitride Substrates (GaN). This will be accomplished using our pulsed MOCVD growth technique to deposit AlInN films at a higher growth temperature than conventional MOCVD deposition methods, resulting in better material quality. The developed material technology will be scaled-up to 2” diameter substrates in Phase II. In Phase II program we will also use the material from Phase I to develop robust sub-micron insulating gate HEMTs. The suitability of their insertion in military systems will be established via a joint processing and device testing program with DOD test labs (WPAFB and the Joint Services Task Team). In Phase III program we will develop a large volume manufacturing technology for epitaxial wafer supply to DoD and commercial outfits in a strategic partnership with a large company. BENEFIT: The primary commercial market that this development effort is directed towards is for high power T/R modules for both military and commercial (wireless) markets. Nitek expects that government military related radar applications will be the initial adopters. Nitek will supply telecommunications amplifier manufacturers with epi material for device development and collaborate with them to standardize device designs for next generation wireless. The total market size was projected to be approx. $155 M/yr in 2007.