SBIR/STTR Research Award
High Voltage High Frequency Switch
Award amount
$69,771Program and phase
SBIR · Phase IAward year
2008Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- SemiSouth Laboratories
- Proposal award date
- 2008-07-23
- Contract end date
- 2009-04-23
- UEI
- Not reported
- Solicitation number
- 2007.3
- Topic code
- N07-197
Research abstract
SemiSouth Laboratories, Inc. (SemiSouth), a leading developer and manufacturer of silicon carbide (SiC) power-electronics device technology, proposes the development of a low-cost hybrid switch based on the company’s silicon carbide high-voltage junction field effect transistor (JFET) products. SemiSouth has two principal objectives for Phase I. First, to establish the feasibility of the proposed four-terminal switch by building a 1.5 kV prototype using available 1.6-kV SiC JFETs and COTS electronic components that provide the electrical isolation between the control inputs and the high-voltage outputs; and second to scale the design of the current 1.6-kV SiC JFET to 2-kV in preparation for a possible Phase II effort.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High Voltage High Frequency SiC Switch
- High Voltage High Frequency SiC Switch
- High-Voltage SiC Switch with Nanosecond Response Time