SBIR/STTR Research Award
High-Voltage SiC Switch with Nanosecond Response Time
Award amount
$70,000Program and phase
SBIR · Phase IAward year
2008Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- TRUENANO, INC.
- Proposal award date
- 2008-07-15
- Contract end date
- 2009-05-15
- UEI
- F45QZBNBW4G6
- Solicitation number
- 2007.3
- Topic code
- N07-197
Research abstract
TrueNano Technology Corporation will develop the design and simulate a high-voltage SiC switch with nanosecond switching transients. Our novel approach is based on a vertically scaled bipolar junction transistor with a high voltage termination structure. This structure is expected to meet the stated objectives and result in a reliable and manufacturable device suitable for deployment in both military and commercial applications.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Fast ANd Trustwordy AI-powered growth of Thick SiC epi (FANTATSIC)
- Hot Filament CVD Technology for disruptive, high throughput SiC epitaxial growth reactors
- Hot Filament CVD technology for disruptive, high-throughput SiC epitaxial growth reactors
- THz and Sub-THz MEMS-Fabricated Klystron Amplifier
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High Voltage High Frequency SiC Switch
- High Voltage High Frequency SiC Switch
- High Voltage High Frequency Switch
Research funding history
5 SBIR/STTR records share this UEI (2008–2025). Reported award amounts total $1,389,581. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense