SBIR/STTR Research Award
GaN FETs for Class D PAs and broadband MMICs
Award amount
$750,000Program and phase
SBIR · Phase IIAward year
2008Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- Nitronex Corporation
- Proposal award date
- 2008-05-14
- Contract end date
- 2010-05-14
- UEI
- Not reported
- Solicitation number
- 2006.2
- Topic code
- N06-119
Research abstract
The objective of the Phase II SBIR is to develop our GaN FET technology and satisfy the needs of NAVAIR communications systems. Specifically, we will be developing GaN FET technology that is suitable for Class D operation at frequencies up to 2GHz. We will achieve the program objectives by developing high frequency capable GaN FETs to support the switching speeds needed for the Class D PA. We will also develop broadband high power GaN MMICs with power and efficiency across 225-3200MHz frequency bands. This phase II will benefit JTRS 2MHz-2GHz radio program and also the F/A-18 Hornet avionics needs.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Broadband GaN-based Power Amplifier for Airborne Tactical Communication Systems
- Broadband GaN-based Power Amplifier for Airborne Tactical Communication Systems