Broadband GaN-based Power Amplifier for Airborne Tactical Communication Systems

Nitronex will use baseline GaN HEMT process (NRF1) to demonstrate feasibility of broadband 35-40W solid-state PA with >35% efficiency across 225-3200MHz frequency range required by the program. Nitronex will establish feasibility by (a) reducing thermal resistance of current generation device layout through thermal simulation (b) modifying CFET model with updated thermal characteristics of the output stage device (c) performing PA design with suitable architecture for high gain broadband performance using ADS and (d) fabricating devices to validate thermal and RF models of the output stage device. Nitronex will use its existing NRF1 technology, which has inherent broadband capability due to high power density (of GaN FETs), cost advantage and reliability (due to Si substrates). Nitronex will establish that usage of GaN on Si technology for solid-state PAs will lead to flexible, long range (high power), ultra broadband (more than 1 octave) and high efficiency amplifiers with small form factor and light weight.