SBIR/STTR Research Award
High Temperature, High Power Density Silicon Carbide (SiC) Based Motor Drives for Aircraft Applications
Award amount
$746,891Program and phase
SBIR · Phase IIAward year
2008Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- Arkansas Power Electronics International, Inc.
- Proposal award date
- 2008-05-05
- Contract end date
- 2010-09-05
- UEI
- QZMVB44SHW19
- Solicitation number
- 2007.1
- Topic code
- AF071-181
Research abstract
The terminal objective of this Phase II work will be the development of compact, fully integrated, high-temperature (250 °C), high-power-density SiC-based motor drives for avionics applications. The developed multi-chip power module (MCPM) will target an advanced motor drive application such as actuators (i.e., position control). The initial electrical rating targeted will be a 270 VDC input voltage system with power levels of up to 10 kW. The developed power module will integrate the following technologies: 1. SiC normally-off cascode power devices (provided by Microsemi) 2. APEI, Inc’s new high-temperature integrated substrate MCPM technology 3. High temperature HTMOS SOI digital control electronics 4. TRS Technologies’ wide-temperature high-voltage capacitors Several Phase II technology demonstration prototypes will be fabricated and fully tested. APEI, Inc. targets the achievement of a technology readiness level (TRL) of 6 at the end of this Phase II.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High Power Density GaN-Based Power Converters for Grid-Tied Energy Storage
- A High Efficiency, High Power Density, GaN-Based DC-DC Converter for Grid-Tied Energy Storage Applications
- Extreme Temperature Radiation Tolerant Instrumentation for Nuclear Thermal Propulsion Engines
- A Modular High Voltage (> 10 kV), High Power Density SiC Power Package for Extreme Environments
- A 300C Power Module Using Wide Bandgap Devices, Advanced Materials/Processes, and High Temperature Integrated Circuits for Geothermal Applications
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High Temperature Electronics for Spacecraft Power Management and Distribution
- 20 kW High Temperature (300+ °C), Rad-Hard Silicon Carbide (SiC) DC/DC Power Converters
Research funding history
59 SBIR/STTR records share this UEI (2003–2015). Reported award amounts total $19,645,087. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation, Department of Transportation