SBIR/STTR Research Award

High-Speed, Low-Power Embedded ADC (2007056)

Award identifier ae486f54133a3db6feb51cd9a7d5f37d92bf0b425c7ea9e7f0fe0d3ef08588bfAwarding agency Department of Defense · Missile Defense Agency

Award amount

$957,000

Program and phase

SBIR · Phase II

Award year

2008

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Hittite Microwave Corporation
Proposal award date
2008-04-15
Contract end date
2010-04-15
UEI
Not reported
Solicitation number
2006.3
Topic code
MDA06-032

Research abstract

Hittite proposes to develop an advanced wideband high-speed, low-power, radiation-tolerant ADC for embedded applications such as miniature receiver/exciter modules (mDReX) and wafer-scale arrays (WSAs). Offering higher speed and lower power than competing devices, the ADC will advance the state of the art and enable next-generation digital sub-arrays. A combination of innovative design and SiGe BiCMOS technology will be used to realize the ADC. Implemented as a key part of the receiving signal chain, the ADC will reduce RF complexity by moving data conversion inside the antenna element to enable radars with size, weight, power, and cost a fraction that of current phased arrays. Phase I developed a preliminary design and simulations demonstrated its feasibility. During Phase II, initial ADC prototypes (including a companion demux) will be designed, laid out, fabricated, packaged, and tested. The initial design and layout will then be refined in preparation for a second fabrication and test cycle during the Phase II Option. Follow-on programs will integrate the ADC into field systems, adding features and enhancing performance.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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