SBIR/STTR Research Award

High-Speed, Low-Power Embedded ADC (9727)

Award identifier e573930c1a44ca9f7b89edd3b8a0b913e409a54c62edebc2d94ca9de8e119477Awarding agency Department of Defense · Missile Defense Agency

Award amount

$99,949

Program and phase

SBIR · Phase I

Award year

2007

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Hittite Microwave Corporation
Proposal award date
2007-02-28
Contract end date
2007-08-28
UEI
Not reported
Solicitation number
2006.3
Topic code
MDA06-032

Research abstract

Hittite proposes to develop an advanced wideband high-speed, low-power ADC for embedded applications such as wafer-scale arrays (WSAs). Offering higher speed and lower power than competing devices, the ADC will advance the state of the art and enable next-generation digital sub-arrays. A combination of innovative design and SiGe BiCMOS technology will be used to realize the ADC. Implemented as a key part of a WSA’s receiving signal chain, the ADC will reduce RF complexity by moving data conversion inside the antenna element to enable radars with size, weight, power, and cost a fraction that of current phased arrays. During Phase I a conceptual design will be developed and key cells simulated. Prototype ADCs will be designed during Phase II for use in WSAs for SPEAR and other applications.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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