SBIR/STTR Research Award

Innovative Shape Memory Materials Process Techniques for Microelectronic Device Packaging

Award identifier 4a0e9f070ca01b3a58ce966c7f20bafb04b6e1e4f8f4fee2c8339912b6c5c730Awarding agency Department of Defense · Army

Award amount

$729,971

Program and phase

SBIR · Phase II

Award year

2008

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
M3TECHCENTER, LLC
Proposal award date
2008-02-29
Contract end date
2010-02-28
UEI
Not reported
Solicitation number
2006.2
Topic code
A06-220

Research abstract

Shape memory materials have shown great potential in MEMS applications, including improved packaging structural performance and reliability. In this Phase II study new shape memory material processing and manufacturing technology will be developed, i.e. a combined reaction synthesize and net-shape forming technique (CSF-tech) to fabricate shape memory components at low cost and high performance. Related techniques associated with this method includes the use of severe deformation for material homogenization and refinement, micro/nano composite development, and the use of shape memory effect for reduced and fully reservable/repeatable hysteresis for improved MEMS packaging reliability. The technique will be implemented in the fabrication of a prototype new class of micro-fasteners with high effeciency in assembly/disassembly. The proposed approach and objectives will resolve critical issues of MEMS packaging performance and reliability, and will provide low-cost/high efficiency SMM manufacturing method for broad applications.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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