Instrumentation and Process Development for the Production of Orientation-Patterned GaAs (OP-GaAs)

During Phase 2 we will develop growth methods and refine the growth system to produce millimeter-thick, periodically oriented GaAs in a single growth step. A commercial source of OP-GaAs thick films does not exist. Among present producers, a 1.0 mm film has been grown, but reproducible production in commercial quantities would require resolution of several yield, productivity and quality issues. Our objective is a scalable, reliable supply of millimeter-plus, OP-GaAs suitable for use in an optically pumped oscillator. This application requires optical loss and domain morphology that is not available and stands in the way of device development. We will combine Stanford’s expertise in nonlinear and guided-wave optics, optical devices based on patterned semiconductors, and optical characterization with Sunvolt’s expertise in materials research, production equipment, and process development. We will use Stanford’s new cold-walled, vertical flow HVPE system, to be installed and tested at the completion of Phase 1. We will optimize and document processes as we move in six steps from initial growth of thin epitaxial films to thick growth of patterned films with the structure and transparency required by the target devices.