FABRICATION OF HIGH ASPECT RATIO Cu AND BRASS NANOFLAKES FOR IR OBSCURANT APPLICATIONS
Award amount
$120,000Program and phase
SBIR · Phase IAward year
2008Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- SIGMA TECHNOLOGIES INTERNATIONAL GROUP, INC.
- Proposal award date
- 2008-01-28
- Contract end date
- 2008-07-28
- UEI
- Z9AXH5DHE639
- Solicitation number
- 2007.2
- Topic code
- A07-121
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Energy Buffer Capacitors for Use in Dynamic Power Conversion ACUs
- Physical Vapor Deposition (PVD) as a Method to produce High Aspect Ratio Conductive Flakes for Advanced Bispectral or Infrared (IR) Obscuration
- Energy Buffer Capacitors for Use in Dynamic Power Conversion ACUs
- Lightweight High Energy Density Capacitors for NASA AMPS and PPUs
- Lightweight High Energy Density Capacitors for NASA AMPS and PPUs
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Development and Fabrication of Highly Conductive High Aspect Ratio Nanoflakes for Infrared Obscurant Applications
- FABRICATION OF HIGH ASPECT RATIO Cu AND BRASS NANOFLAKES FOR IR OBSCURANT APPLICATIONS
- Development and Fabrication of Highly Conductive High Aspect Ratio Nanoflakes for Infrared Obscurant Applications
Research funding history
73 SBIR/STTR records share this UEI (1993–2021). Reported award amounts total $15,390,265. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Energy, Environmental Protection Agency