Integrated wide-bandgap semiconductor photoconductive switch with a terahertz antenna

Current and future applications of terahertz technology are demanding higher and higher powers to perform analysis. Wide band spectroscopy applications, in particular, could benefit greatly from the creating high power laser-induced semiconductor switches (LSS). To this end we have identified five materials for further development as high power, wide bandgap LSS materials. Emphasis was placed on materials with high breakdown voltage, good thermal conductivity, and fast carrier recombination times. These materials will be analyzed with respect to structural, electrical, and optical properties to maximize their potential use as semiconductor switches.