High-Throughput Experimentation Physical Vapor Deposition (PVD) Chamber for Accelerated Microelectronics Materials Research and Development
Award amount
$99,998Program and phase
SBIR · Phase IAward year
2008Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Microelectronics Activity
- Recipient company
- PVD Products, Inc.
- Proposal award date
- 2007-12-06
- Contract end date
- 2008-06-30
- UEI
- WZYLGJJYHBB7
- Solicitation number
- 2007.2
- Topic code
- DMEA07-001
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Rugged Packaging of Laser Optics
- Rugged Packaging for Damage Resistant Inertial Fusion Energy Optics
- Compact, Efficient, Rapidly-Tunable LWIR Transmitter
- SBIR Phase I: Thermal Atomic Nitrogen/Hydrogen Source for Molecular Beam Epitaxy Applications
- Intelligent Process Control for Pulsed Laser Deposition
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High-Throughput Experimentation Physical Vapor Deposition (PVD) Chamber for Accelerated Microelectronics Materials Research and Development
- High-Throughput Experimentation Physical Vapor Deposition (PVD) Chamber for Accelerated Microelectronics Materials Research and Development
Research funding history
7 SBIR/STTR records share this UEI (1995–2008). Reported award amounts total $1,374,351. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Energy