SBIR/STTR Research Award

High-Throughput Experimentation Physical Vapor Deposition (PVD) Chamber for Accelerated Microelectronics Materials Research and Development

Award identifier b8310463333bcb69c6107f049ff6e73603c259f048e4f566b1ee4c11f1b9749cAwarding agency Department of Defense · Defense Microelectronics Activity

Award amount

$99,959

Program and phase

SBIR · Phase I

Award year

2008

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Award details

Awarding agency
Department of Defense
Branch
Defense Microelectronics Activity
Recipient company
INTERMOLECULAR, INC.
Proposal award date
2007-11-14
Contract end date
2008-04-30
UEI
KLQGCP4KS1B5
Solicitation number
2007.2
Topic code
DMEA07-001

Research abstract

The cost to maintain Moore’s law is growing exponentially with every generation of semiconductor device. To support the ever-increasing demand for smaller, faster, lower-power, and lower-cost microelectronic semiconductor devices, tools enabling faster and lower-cost research and development are required. Current development tools are only capable of achieving one data point per wafer. The goal of this effort is to determine the feasibility of developing a PVD chamber capable of achieving 100 or more data points on a single wafer. This will enable incremental variations in semiconductor process parameters across a wafer. If successful, this will result in orders of magnitude reduction in both time and cost for the microelectronic research and development efforts.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

4 SBIR/STTR records share this UEI (2008). Reported award amounts total $1,975,313. Reported amounts are not federal obligations.

Phases: Phase II, Phase I

Agencies: Department of Defense

Agency intelligence

Department of Defense

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