High-Throughput Experimentation Physical Vapor Deposition (PVD) Chamber for Accelerated Microelectronics Materials Research and Development
Award amount
$99,959Program and phase
SBIR · Phase IAward year
2008Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Microelectronics Activity
- Recipient company
- INTERMOLECULAR, INC.
- Proposal award date
- 2007-11-14
- Contract end date
- 2008-04-30
- UEI
- KLQGCP4KS1B5
- Solicitation number
- 2007.2
- Topic code
- DMEA07-001
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High-Throughput Experimentation Physical Vapor Deposition (PVD) Chamber for Accelerated Microelectronics Materials Research and Development
- In-Line Characterization System for Advanced High K Dielectric / Metal Gate CMOS Transistor Stack for the Development of High Speed, Low Power Microel
- In-Line Characterization System for Advanced High K Dielectric / Metal Gate CMOS Transistor Stack for the Development of High Speed, Low Power Microel
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
4 SBIR/STTR records share this UEI (2008). Reported award amounts total $1,975,313. Reported amounts are not federal obligations.
Phases: Phase II, Phase I
Agencies: Department of Defense