Development of Versatile Wafer Probe System for High Power Devices

High power electronics market and applications are booming due to the need of such devices in plugin electric vehicles, home appliances, aerospace and defense applications. Wide bandgap semiconductors, such as SiC, are the most promising materials for high power metal-oxide semiconductor field-effect transistors, diodes, and insulated-gate bipolar transistors. There is a constant need among all the applications for more powerful devices, requiring in turn higher power and higher voltage-capable probe stations and auxiliary equipment. At present, commercially available probe stations are rated up to 10kV DC at +200OC and up to 30A DC (600A pulsed). However, extension of the voltage and current limits to 40kV and 500A pulsed/10A DC, while also extending the temperature range of probing, is needed for defense, aerospace and commercial applications. The team and MicroXact Inc. and CoolCAD Electronics LLC is proposing to develop a high power (40kV and 10A DC/ 500A pulse rated), semi-auto, 200mm, high vacuum liquid nitrogen-cooled thermal (100K to 700K temperature range) probe station for testing high power and high voltage devices, such as wide band semiconductor metal-oxide semiconductor field-effect transistors, diodes, and insulated-gate bipolar transistors. In Phase I of the project the team developed the mechanical, thermal and electrical models and design of the proposed system, develop, build and evaluate 1 generation prototype of high-power probe (15A DC demonstrated), of high voltage probe and chuck (28kV verified), and 200mm high thermal load chuck and verify system and probe and performance by testing high voltage SiC MOSFETs. Commercialization strategy was developed and first commercial sale of high voltage probe developed on the project was completed. In Phase II, MicroXact will procure 3rd party components, fabricate our own parts, assemble and perform rigorous testing of the high-power probe station to insure its functionality and safety. During the later months of Phase II, a prototype high power probe station will be delivered and installed at DMEA and training of DMEA personnel will be performed. The solution developed on this SBIR project will be commercialized immediately after Phase II completion.