Solid-State High-Efficiency Radar Transmit Module

The primary objective of Phase 1 is to establish a design baseline for a very high power and highly efficient GaN amplifier. Design objectives for the Class E/F power amplifier are to achieve 100 watts power output at >60% PAE over 405-450 MHz. Hittite will synthesize Class E, Class F and inverse class F and then select the optimum load and source networks to achieve highest reasonable efficiency. Hittite will use a very thermally conductive hybrid package. That packaging is a highly cost effective proven mass production packaging technology. Hittite will identify the optimum process for MMIC implementation of the amplifier, and then provide modeling results of the core technology demonstrating the RF, DC and thermal characteristics of the amplifier. From this selected MMIC core technology we will build and demonstrate a hybrid version of this amplifier. The hybrid version will use proven 50V GaN devices and a proven design approach. In the option Hittite will also design a high K dielectric power combiner, and the first iteration of the GaN 100 watt PA MMIC. Hittite has designed over 20 GaN PA’s for numerous DOD customers demonstrating > 70% PAE GaN PA’s.