Solid-State High-Efficiency Radar Transmit Module

Demonstration of highly efficient 1000W amplifier (405-450 MHz) is proposed in the two-phase program. The first phase is a feasibility phase where a 100W 70% efficiency block amplifier will be demonstrated using GaN HEMT devices and Class F circuit design technology. In phase 2 of the program, the block amplifier performance will be enhanced to 300W. Four of these block amplifiers will be combined to achieve the Phase 2 goals. In parallel to the technical efforts during Phase 1, we will establish a commercialization plan where necessary steps will be identified to manufacture the products from Phase 2. Auriga Measurement Systems will team with experts in Raytheon Advanced Devices Center to bring the best possible results to the customer. Raytheon brings GaN technology and Radar system experience. Raytheon is one of the pioneers in GaN device development. Its world-class device performance is leading the industry. Auriga Measurement Systems is a small business with a large experience. Auriga maintains a leading edge in device measurement and characterization systems as well as device modeling and circuit designs. Its proprietary GaN models have been used to support commercial applications of high power GaN HEMT devices with a very successful results.