SBIR/STTR Research Award
Advanced Fabrication Techniques for High Yield GaAsP Photocathodes
Award amount
$78,872Program and phase
SBIR · Phase IAward year
2006Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- SVT ASSOCIATES INC
- Proposal award date
- 2006-12-20
- Contract end date
- 2007-06-20
- UEI
- MLVQMLJLC139
- Solicitation number
- 2006.3
- Topic code
- N06-166
Research abstract
This Phase I effort seeks to improve the yield and quantum efficiency of GaAsP photocathodes by improved growth process and post-growth fabrication steps
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Efficient EMI/RFI attenuation by GaN-based coating on spinel windows
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
- Plasmonic Enhanced Type-II Superlattice Focal Plane Arrays
- GaAsSb/AlGaAs Superlattice High-Polarization Electron Source
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
165 SBIR/STTR records share this UEI (1990–2014). Reported award amounts total $29,785,067. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation