High-Performance Type II Superlattice LWIR Detector on Si

SVT Associates proposes an innovative application of several technologies to create device quality large diameter GaSb virtual substrates on Si. In combination with this GaSb/Si substrate, a novel arsenic isolation apparatus will be applied to Type-II superlattice (SL) growth for LWIR detector applications. Photodetector arrays using this material are of great interest to the DoD for various applications including, in particular, optical detection and tracking of missiles. Applying these techniques to the Type-II SL grown on Si should result in lower dislocation density, higher material purity, smoother surfaces, and more abrupt SL interfaces of SL, all of which are important factors that should significantly enhance material quality and uniformity, and device operation. We intend to characterize the positive effects of these technologies in Type-II SL grown on Si in Phase I and fabricate discrete LWIR detectors. In Phase II we will refine the processes to realize larger diameter GaSb and Type-II SL detector arrays.