A Reliable Aluminum Nitride High Temperature Electronic Package for High Power Devices

In the Phase I program Sienna Technologies, Inc. has successfully developed (i) a low temperature die attach process that is capable of operating over 400ºC, (ii) wire bondable gold and silver thick film metallizations on AlN substrates, (iii) high temperature stable wire bonds, and (iv) an all AlN single chip module. Based on the success in the Phase I program Sienna Technologies, Inc. proposes to develop AlN based multichip modules that will facilitate the operation of high power GaN and SiC devices at temperatures greater than 300ºC. We will design and assemble a multichip power module, i.e., a 1000 W power inverter capable of operating at 300ºC in an AlN monolithic package, which can operate at temperatures greater than 300ºC using the assembly processes and materials that were developed in Phase I.