High Temperature Packaging Technology for Semiconductors

SatCon proposes to develop semiconductor packaging technology for the -65/+300°C temperature range. The goal is reliable operation while permitting high device temperature and wide temperature cycles, a particular challenge for existing Power and RF packaging techniques which are suited to the -40/+150°C range. While there are many issues to study further in the Phase I portion of the program, we will build on experience we already have with Wide Band Gap devices and in hi-rel and high-temperature packaging. Our approach is based on: · Minimization of number/types of materials · Use of materials stable at high temperatures · Near-perfect matching of thermal expansions, including :metal conductor layers · Use of multiple parallel die to minimize interface stresses, relative to single large die · Complete elimination of bond wires through use of bump-bonding (flip-chip), compression packaging and other advanced techniques. SatCon has active SiC packaging and applications programs and strong working relationships with the major suppliers (Northrop, Cree & SemiSouth have all endorsed this proposal). We have the facilities, knowledge and personnel to undertake this program through the completion of Phase II and relationships in the Wide Band Gap, Defense and Hi-Rel Industries that will enable us to commercialize the results.