AlGaN/GaN HFETs on Silicon for BMDS X-Band Radars

In this program, we will combine commercially available AlGaN/GaN on Si FETs with short gates such that the high frequency performance (X-band and higher) can be significantly increased. The AlGaN/GaN material system has significant advantages over the incumbent technology for X-band applications; specifically, AlGaN/GaN FETs have much higher power density which translates into broader bandwidth. This bandwidth may be traded to increase PAE in the power amplifier design. Affordable and reliable AlGaN/GaN FETs that operate in L and S bands have been commercialized by Nitronex. This has been made possible largely through the use of high quality and scalable Si substrates. Nitronex is highly experienced in GaN epitaxy, fabrication, device and RF design. By working with the University of Florida and their short gate lithography capability combined with Georgia Institute of Technology and their physical simulation expertise, we will demonstrate high performance X-band discrete devices. In Phase II, we will work with systems level military contractors to develop the insertion strategy for X-band capable AlGaN/GaN FETs on Si. Based on such a strategy, the conceived solution will be implemented through the development of a MMIC solution that meets all program requirements.