SBIR/STTR Research Award
Passivation of InAs/GaInSb Superlattices for Improved VLWIR Focal Plane Performance
Award amount
$500,000Program and phase
SBIR · Phase IIAward year
2006Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- SVT ASSOCIATES INC
- Proposal award date
- 2006-07-12
- Contract end date
- 2008-07-12
- UEI
- MLVQMLJLC139
- Solicitation number
- 2004.1
- Topic code
- MDA03-074
Research abstract
This Phase II program proposes a unique passivation process for infrared focal plane arrays. It entails the re-growth of isolating structures on the processed array that will passivate surface traps, leading to dramatically reduced surface-related transient effects and improved device performance. We shall team up with MDA designated partners to adapt the passivation process to focal plane arrays fabricated from InAs/GaInSb superlattices. This material system is capable of infrared detection from 2 to > 30 micron and the arrays are of great interest to the DoD for various applications including, in particular, optical detection of space borne objects.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Efficient EMI/RFI attenuation by GaN-based coating on spinel windows
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
- Plasmonic Enhanced Type-II Superlattice Focal Plane Arrays
- GaAsSb/AlGaAs Superlattice High-Polarization Electron Source
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
Research funding history
165 SBIR/STTR records share this UEI (1990–2014). Reported award amounts total $29,785,067. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation