Cost Effective Manufacturing of Device Quality Large Diameter InSb

SVT Associates proposes an innovative ion-beam, atomic Hydrogen and off-axis substrate techniques for device quality large diameter InSb for 3-5 um IR detector applications. Photodetector arrays using this material are of great interest to the DoD for various applications including, in particular,optical detection and tracking of missiles. Ion-beam, Hydrogen atomic, and off-axis substrates have already been shown to improve other III-V growth, such as GaN, GaAs, and InAs. Applying the these techniques to the InSb grown on Si should result in lower dislocation density, higher material purity and smoother surface morphology, all important factors that should significantly enhance material quality and device operation. We intend to characterize the positive effects of these techniques in large area InSb in Phase I. In Phase II we will refine the process to realize larger diameter InSb and InSb-based discrete detectors and detector arrays.