Space Qualified Nonvolatile Memory

There exists a great need for a non-volatile radiation-hardened, high density random access memory with performance comparable to that of a commercial dynamic random access memory (DRAM) and with the non-volatility of an electrically erasable programmable read-only memory (EEPROM) for space based applications. Current possible solutions for filling the void of radiation hard non-volatile memories are FeRAM, MRAM, NRAM, and CRAM. From these options, CRAM is a major prospect to be incorporated in current space computer architectures for the hostile radiation environment of space. CRAM, however, still requires some advancement/refinement in technology to be a suitable replacement for Flash memory with operating characteristics similar to SRAM. Several issues associated with CRAM technology are the long SET and RESET times and the high powers required to change the phase of the memory element. Nantero’s carbon nanotube (CNT) nanoelectronic technology may assist in overcoming several of the hurdles that are hampering the incorporation of CRAM as a reliable radiation hard non-volatile memory. The goal of this Phase II proposal is to investigate the utilization of CNT nanoheaters to change the phase of the chalcogenide material employed in BAE’s CRAM technology, creating a prototype CNT heated CRAM element.