SBIR/STTR Research Award

Conformal Semiconductor Circuits

Award identifier 5dcf4e32bb2e5d6cc9da43b5d8d06415f0180fb9a4ad6905278ca248d7d46b82Awarding agency Department of Defense · Army

Award amount

$98,387

Program and phase

SBIR · Phase I

Award year

2005

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
CROSSFIELD TECHNOLOGY LLC
Proposal award date
2005-11-22
Contract end date
2006-05-22
UEI
EE2BD1HMA748
Solicitation number
2005.2
Topic code
A05-008

Research abstract

Crossfield proposes to develop a hybrid direct write technique for developing conformal circuits and semiconductors. Crossfield, together with Honeywell and the Massachusetts Institute of Technology (MIT) intend to demonstrate a conformal circuit technique that enables the metal elements of the circuit (such as power and signal traces or antennas) and supporting semiconductors such as bias circuits to be directly written to the conformal surface. The remaining active devices will employ a high performance semiconductor fabrication technique based on Honeywell's Silicon on Insulator (SOI) technology. SOI is well suited to the conformal circuit fabrication process and will enable digital or millimeterwave devices to be added on the previously developed metal patterns. The finished conformal circuit will be low cost, while enjoying the high performance of existing, mature semiconductor technology.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

38 SBIR/STTR records share this UEI (2004–2021). Reported award amounts total $16,910,245. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration

Agency intelligence

Department of Defense

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