SBIR/STTR Research Award

ZnO UV-Blue Light Emitters on High Quality ZnO

Award identifier 7e79ae8fe6a849cd25dd363b8f2026ab9e6203b90386097166826d893a37926dAwarding agency Department of Defense · Army

Award amount

$729,985

Program and phase

SBIR · Phase II

Award year

2005

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
ZN TECHNOLOGY, INC.
Proposal award date
2005-11-10
Contract end date
2007-11-09
UEI
Not reported
Solicitation number
2004.3
Topic code
A04-068

Research abstract

ZnO has many inherent advantages over current materials used to fabricate UV LEDs and lasers. It is a highly efficient light emitter due to the excitonic nature of the emission. The recent development of p-type doping enables many devices to be fabricated based on ZnO. The availability of conductive ZnO substrates enables more efficient, longer lasting LEDs to be developed. Uniquely, this project will utilize the high purity, high quality, 2-inch diameter ZnO single crystals developed by ZN Technology as substrates on which to epitaxially grow Zn(Mg)O/Zn(Cd)O multiple quantum well LEDs by MBE and MOCVD for blue and UV emission. Because the substrate is both conductive and transparent, the LEDs will be much simpler to build and have a higher efficiency. In addition to LEDs, the unique properties of ZnO will enable the construction of very low threshold diode lasers. For this reason, lasing in Zn(Cd,Mg)O quantum well structures will be investigated. ZN Technology and Rutgers University have teamed to also explore the use of ZnO nanotips to increase the light output of the ZnO LED. Nano-scale ZnO LED structures will also be investigated.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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