SBIR/STTR Research Award
ZnO UV Light Emitters on High Quality ZnO
Award amount
$120,000Program and phase
SBIR · Phase IAward year
2005Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- ZN TECHNOLOGY, INC.
- Proposal award date
- 2004-12-08
- Contract end date
- 2005-06-08
- UEI
- Not reported
- Solicitation number
- 2004.3
- Topic code
- A04-068
Research abstract
ZnO has many inherent advantages over current materials used to fabricate UV LEDs and lasers in that it is a more efficient light emitter, has better radiation hardness, and can easily be fabricated in bulk single crystals. Uniquely, this project will utilize the high purity, 2-inch diameter ZnO single crystals developed by ZN Technology as substrates on which to epitaxially grow ZnO pn junction LEDs using molecular beam epitaxy. The use of nanotips to increase the light output of the ZnO LED will also be investigated. In the option phase ZnMgO/ZnO heterostructures will be developed as a component of an LED with even higher efficiency. Also in the option phase, growth of LEDs and lasers on other orientations of single crystal ZnO substrates will be investigated as avenues for other devices and improved performance.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- ZnO Based Light Emitters for UV/Blue Applications
- ZnO Based Light Emitters for UV/Blue Applications
- ZnO Based Light Emitters for UV/Blue Applications
- ZnO Based Light Emitters for UV/Blue Applications
- ZnO UV-Blue Light Emitters on High Quality ZnO