SBIR/STTR Research Award

ZnO UV Light Emitters on High Quality ZnO

Award identifier 2c3531b9e661fed2ec332a8cb9f1b5483194a753304a1a88352d5a041cf13ea7Awarding agency Department of Defense · Army

Award amount

$120,000

Program and phase

SBIR · Phase I

Award year

2005

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
ZN TECHNOLOGY, INC.
Proposal award date
2004-12-08
Contract end date
2005-06-08
UEI
Not reported
Solicitation number
2004.3
Topic code
A04-068

Research abstract

ZnO has many inherent advantages over current materials used to fabricate UV LEDs and lasers in that it is a more efficient light emitter, has better radiation hardness, and can easily be fabricated in bulk single crystals. Uniquely, this project will utilize the high purity, 2-inch diameter ZnO single crystals developed by ZN Technology as substrates on which to epitaxially grow ZnO pn junction LEDs using molecular beam epitaxy. The use of nanotips to increase the light output of the ZnO LED will also be investigated. In the option phase ZnMgO/ZnO heterostructures will be developed as a component of an LED with even higher efficiency. Also in the option phase, growth of LEDs and lasers on other orientations of single crystal ZnO substrates will be investigated as avenues for other devices and improved performance.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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