Terahertz-Frequency Lasers based on Semiconductor Nanocrystals

ALTAIR Center in cooperation with the NanoTech Institute at the University of Texas at Dallas proposes to develop a new class of terahertz (THz) lasers generating about 1 mW in the frequency range 0.3-10 THz at room temperature. The proposed concept is based on employing the semiconductor nanocrystals (quantum dots). The nanocrystal emitters are optically pumped by commercially available powerful and cost-efficient laser diodes operating in the near-infrared region of spectrum. The proposed concept allows complete preventing the nonradiative Auger processes that are a major obstacle for lasing on nanocrystals. Because transition frequencies in the nanocrystals are easily controlled by appropriate choice of nanocrystal radius and semiconductor material, the proposed laser sources can cover the entire THz-frequency range. In the course of Phase I project, we already proved feasibility of the proposed concept of THz lasing on semiconductor nanocrystals by analytical studies and numerical modeling. In Phase II the prototype THz laser will be fabricated, optimized tested and delivered to DoD for immediate implementation.