SBIR/STTR Research Award

Tunable Terahertz-Frequency Lasers Based on Semiconductor Nanocrystals

Award identifier 170fc970a42379fe60301f7b5f999214a7334c7dfb140352ecb5f7f38ffca709Awarding agency Department of Defense · Army

Award amount

$100,000

Program and phase

STTR · Phase I

Award year

2004

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
Altair Center, Llc.
Proposal award date
2004-07-30
Contract end date
2005-01-31
UEI
Not reported
Solicitation number
Not reported
Topic code
A04-T015

Research abstract

ALTAIR Center proposes to develop a new class of tunable terahertz laser sources based on an active laser material fabricated from spherical semiconductor nanocrystals (quantum dots) incorporated into an optical medium transparent in terahertz-frequency range. Due to the strong Stark effect, recently discovered in semiconductor nanocrystals, the transition frequencies can be shifted by an applied low electric voltage that allows developing THz lasers tunable in a wide frequency range. In the proposed implementation, the nanocrystal composites will be incorporated into silicon waveguide structure working as an optical resonator for nanocrystal emitters. That enables on-chip integration of the THz laser sources and terahertz photonics with silicon microelectronics. All key components of the proposed device are either commercially available or routinely fabricated in many laboratories. In Phase I, we will prove feasibility of the proposed concept, evaluate optimum parameters of the required optical elements, and identify cost-effective technology for fabrication of the THz laser. In Phase II, the technology will be completely optimized and applied to fabrication of the prototype THz lasers tunable in a wide range of terahertz frequencies.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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