The development of a Single-Event upset immune, re-programmable and non-volatile field programmable gate array (r-NV-FPGA)
Award amount
$750,000Program and phase
SBIR · Phase IIAward year
2005Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Threat Reduction Agency
- Recipient company
- STRUCTURED MATERIALS INDUSTRIES, INC.
- Proposal award date
- 2005-06-15
- Contract end date
- 2007-06-14
- UEI
- WMLSF59AE7E1
- Solicitation number
- 2003.1
- Topic code
- MDA03-056
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- SiC Low Gain Avalanche Diode (LGAD) for Minimum Ionization Particle (MIP) sensors
- Optimal Radiation Tolerant High Intensity High Temperature Photovoltaics
- Large Area InGaN/GaN MQW p-i-n Avalanche Photodiode Cherenkov Radiation Detectors
- High Performance High Current CW polarized photocathodes for Electron Ion Colliders
- Innovative Equipment Large Single Crystal CdZnTe Production for Long-Wave Infrared Detector Arrays
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Ballistic Missile System Innovative Radiation Hardened/Tolerant Electronics Products
- Ballistic Missile System Innovative Radiation Hardened/Tolerant Electronics Products
- Radiation Hardness by Design and Integration Production of 8-16 Mega-bit SRAM
Research funding history
177 SBIR/STTR records share this UEI (1992–2024). Reported award amounts total $45,517,958. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration, National Science Foundation, Department of Commerce, Department of Homeland Security