Demonstration of High Power, High-Brightness IR (1.8-1.9 µm) Strain-Compensated InGaAsP/InGaAs QW Laser Arrays

In this work, we will demonstrate military specification compatible 1.8 - 1.85 µm InP-based diode pump laser arrays with a power output exceeding 10 W, the critical milestone necessary to enabling system insertion. These sources can help in the critical development of a variety of military and home security applications, including optical pumping sources for 3-5 µm lasers, chemical sensing, laser surgery, laser radar, inter-office broadband wireless communication links, and last mile fiber-optic communications. During the first 12 months of the Phase II, we propose to optimize the laser structure and epitaxial growth process for maximum output power, maximum T0 and T1 and maximum power efficiency. We will establish a quick-turn-around broad-area laser fabrication and test capability in close proximity to the epitaxial growth processes. This will allow extensive study of the key factors needed for optimizing the laser structure in order to obtain near-theoretical maximum output powers. In parallel, the laser element fabrication process and the array bar packaging process will be optimized with a subcontractor. During the second 12 months of the program, the optimized laser structure will be integrated with the refined laser fabrication and packaging process.