SBIR/STTR Research Award
Novel Approach toward High Brightness Mid-Infrared Lasers
Award amount
$100,000Program and phase
SBIR · Phase IAward year
2004Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- LUTRONICS
- Proposal award date
- 2004-04-15
- Contract end date
- 2005-04-15
- UEI
- Not reported
- Solicitation number
- 2004.1
- Topic code
- AF04-010
Research abstract
Semiconductor lasers covering mid-infrared wavelength range have been receiving extensive attentions in recent years. Many primary challenges, however, have been impeding their development progress for many years. Brightness of those developed versions, for example, is still not high enough for practical uses. Brightness depends mainly on the output intensity and beam profile. Wavelength coverage, which is required to cover full mid-infrared range, is another concern. To widen this wavelength coverage, new material system is thus highly needed. In this program, Lutronics uses an innovative structural design and a new material system to reach the goal with effectiveness. The program will be fully grounded with Lutronics's advanced MBE facilities and strong expertise in semiconductor laser development.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Demonstration of High Power, High-Brightness IR (1.8-1.9 µm) Strain-Compensated InGaAsP/InGaAs QW Laser Arrays
- Initial Demonstration of High-Brightness IR (1.8-1.9 µm) Strain-Compensated InGaAsP/InGaAs QW Lasers