Nanostructured active layers for deep-green light emitting diodes (LED)

In phase I, Dot Metrics Technologies demonstrated the feasibility of a new method of introducing deep-green luminescent nanostructure into semiconductor materials for light-emitting device applications. The materials were used to fabricate and characterize preliminary optoelectronic device test structures. In phase II, Dot Metrics Technologies proposes to leverage these new materials and methods in a drive to market new deep-green optoelectronic light emitting devices with superior performance. Rigorous Six Sigma quality methods will be employed to optimize (1) synthesis of nanoscale materials and (2) device fabrication processes. At the end of phase 2, this will result in commercially viable nanoscale materials, and a competitive process for deep-green light emitting device fabrication.