SBIR/STTR Research Award

Nanostructured active layers for deep-green light emitting diodes (LED)

Award identifier ae98bd5a63bf6ca8e9b8f297d8c2202b8e96ad58e9dc30411e820d07053f9c6eAwarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$98,954

Program and phase

SBIR · Phase I

Award year

2004

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
Dot Metrics Technologies, Inc.
Proposal award date
2003-12-17
Contract end date
2004-08-30
UEI
Not reported
Solicitation number
2003.2
Topic code
SB032-029

Research abstract

Dot Metrics Technologies' ultimate goal is to manufacture LED heterostructures using commercial luminescent quantum dots. This SBIR will develop deep-green LEDs to support full spectrum direct-emission illumination for spectroscopy, displays, and general illumination, on military platforms and for commercial applications. Commercial high-efficiency LEDs are typically fabricated from two classes of III-V semiconductor heterostructures. III-nitride (III-N) is used for the color range from ultraviolet to blue-green, and III-arsenide-phosphide (III-AsP) for yellow to near-infrared. The human eye response peak is between III-N and III-AsP, in the "deep-green" wavelength range 555 to 585 nm, where neither material has high-efficiency emission entitlement. Thus the efficiency of white lights based on mixing colors from red, green, and blue LED sources is limited by the low efficiency of the green component. Since deep-green luminescence can be attained from commercially available quantum dots, Dot Metrics will incorporate them into novel LED heterostructures. This SBIR is focused on (1) determining optimum conditions for incorporating luminescent quantum dots into LED heterostructures, and (2) demonstrating resulting prototype green LED devices.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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