SBIR/STTR Research Award
Nanostructured active layers for deep-green light emitting diodes (LED)
Award amount
$98,954Program and phase
SBIR · Phase IAward year
2004Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- Dot Metrics Technologies, Inc.
- Proposal award date
- 2003-12-17
- Contract end date
- 2004-08-30
- UEI
- Not reported
- Solicitation number
- 2003.2
- Topic code
- SB032-029
Research abstract
Dot Metrics Technologies' ultimate goal is to manufacture LED heterostructures using commercial luminescent quantum dots. This SBIR will develop deep-green LEDs to support full spectrum direct-emission illumination for spectroscopy, displays, and general illumination, on military platforms and for commercial applications. Commercial high-efficiency LEDs are typically fabricated from two classes of III-V semiconductor heterostructures. III-nitride (III-N) is used for the color range from ultraviolet to blue-green, and III-arsenide-phosphide (III-AsP) for yellow to near-infrared. The human eye response peak is between III-N and III-AsP, in the "deep-green" wavelength range 555 to 585 nm, where neither material has high-efficiency emission entitlement. Thus the efficiency of white lights based on mixing colors from red, green, and blue LED sources is limited by the low efficiency of the green component. Since deep-green luminescence can be attained from commercially available quantum dots, Dot Metrics will incorporate them into novel LED heterostructures. This SBIR is focused on (1) determining optimum conditions for incorporating luminescent quantum dots into LED heterostructures, and (2) demonstrating resulting prototype green LED devices.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Nanostructured active layers for deep-green light emitting diodes (LED)
- High Efficiency Green Emitter