SBIR/STTR Research Award

Innovative Nanoimprint Lithography Mask Technology for Sub-45 nm Features

Award identifier 07be98f481924555d8d024d16830bf4a728d2bca1901cc139b8b903319c460b0Awarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$98,922

Program and phase

SBIR · Phase I

Award year

2005

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
Nanonex Corporation
Proposal award date
2004-12-14
Contract end date
2005-08-31
UEI
Not reported
Solicitation number
2004.3
Topic code
SB043-045

Research abstract

The objective of the proposal is to explore and develop innovative nanoimprint lithography (NIL) mask technologies including mask structures, mask fabrication methods and mask coatings. These new technologies will significantly improve the quality and lower the cost of NIL masks and NIL processes for sub-45 nm nodes. We will investigate the creation of uniform mask feature protrusion heights, methods and mask structures for more accurate pattern placement in NIL mask fabrication, methods of reduction of line edge roughness in NIL mask fabrication, fast ebeam resists, test structures to determine NIL mask distortions, a method of in-situ application of NIL mask anti-adhesion coatings, and a study of mask costs. As a company with many years of pioneer work in NIL masking and the only company who has made sub-10 nm NIL masks, the proposed research will lead to significant advances in low-cost and high resolution NIL mask technology.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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