SBIR/STTR Research Award
Innovative Nanoimprint Lithography Mask Technology for Sub-45 nm Features
Award amount
$98,922Program and phase
SBIR · Phase IAward year
2005Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- Nanonex Corporation
- Proposal award date
- 2004-12-14
- Contract end date
- 2005-08-31
- UEI
- Not reported
- Solicitation number
- 2004.3
- Topic code
- SB043-045
Research abstract
The objective of the proposal is to explore and develop innovative nanoimprint lithography (NIL) mask technologies including mask structures, mask fabrication methods and mask coatings. These new technologies will significantly improve the quality and lower the cost of NIL masks and NIL processes for sub-45 nm nodes. We will investigate the creation of uniform mask feature protrusion heights, methods and mask structures for more accurate pattern placement in NIL mask fabrication, methods of reduction of line edge roughness in NIL mask fabrication, fast ebeam resists, test structures to determine NIL mask distortions, a method of in-situ application of NIL mask anti-adhesion coatings, and a study of mask costs. As a company with many years of pioneer work in NIL masking and the only company who has made sub-10 nm NIL masks, the proposed research will lead to significant advances in low-cost and high resolution NIL mask technology.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Innovative Nanoimprint Lithography Mask Technology for Sub-45 nm Features
- Low Cost Nanolithography Techniques Using Elastomer Shrinkage and/or Plasmon Confinement