Insertion of an L-band SiC Static Induction Transistor into Missile Defense Radars

SemiSouth proposes to prototype proprietary self-aligned L-band SiC Static Induction Transistors, with 400 V gate-to-drain breakdown voltage, for radar transmitters. A minimum of 14 wafers will be processed, allowing for thousands of parts to be delivered to system integrators. Parts will be delivered to system integrators, load-pull RF tested, and feedback will be used to modify process and layout design to meet transmitter module requirements. Further improvements (smoother ohmic contact metals, improved etch/epi uniformity) will be implemented in the self-aligned process, which will increase yield. Cost, cycle time, and yield will be monitored and reported for each lot.