SBIR/STTR Research Award

Development of High-Temperature Control Circuitry

Award identifier 6e8a0c24c9a6119a22fc18b44f7289247b301cd0ecdc67720faa926a271c2210Awarding agency Department of Defense · Army

Award amount

$749,749

Program and phase

SBIR · Phase II

Award year

2004

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
Arkansas Power Electronics International, Inc.
Proposal award date
2004-09-23
Contract end date
2006-09-23
UEI
QZMVB44SHW19
Solicitation number
2002.2
Topic code
OSD02-EP03

Research abstract

This Phase II SBIR proposal seeks to develop high-temperature electronics by integrating motor drive control and SiC power electronics into a single, compact, highly efficient, reliable, high power density multichip power module (MCPM). Phase II will build upon the Phase I "proof of concept" protoboard hardware. A Phase I demonstration to ARL scientists proved feasibility of the proposed APEI, Inc. technology by operating up to 250 degrees Celsius under full motor load conditions. The theoretical limit of temperature operation for the new class of SiC power semiconductors now under research is in excess of 600 degrees Celsius, bringing to light the opportunity to make major strides in power electronics miniaturization and increased power density. By developing the highly integrated MCPM technology outlined in this Phase II proposal, 90% size and weight reductions in power electronics systems can be achieved.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

59 SBIR/STTR records share this UEI (2003–2015). Reported award amounts total $19,645,087. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation, Department of Transportation

Agency intelligence

Department of Defense

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