Revolutionary Photoreceivers Based on Combining Si-MOS Process with SiGe Nanotechnology

InPhot Inc proposes to develop the enabling SiGe material and device technology for the realization of monolithic near infrared Photoreceiver at 10Gb/s data rates sensitive in the 1300 nm to 1550 nm spectral region for laser communication. We will achieve this by performing device designs to determine suitable material structures, epitaxial growth and device fabrication processes. The primary goal of this proposed Phase I effort is to demonstrate the feasibility of SiGe material system for the monolithic integration of transimpedance amplifier and photodetector sensitive in the 1300 nm to 1550 nm spectral region by developing device and fabrication techniques compatible with CMOS processes. In addition the Phase I effort projects the detector performance that can be realized from the proposed detectors through material and device designs. In Phase II, we will further optimize the material structures and design and fabricate the monolithically integrated near-infrared photoreceivers opearting at 10Gb/s data rates. This project will result in two products: High speed near-infrared SiGe photodetectors in the 1300 nm - 1550 nm spectral band and monolithically integrated photoreceivers. The photoreceivers will be applicable in missile seekers, battlefield target identification and recognition systems, and laser communication. Civilian applications include fiberoptic telecommunications, remote sensing and laser spectroscopy.