Photoreceiver Based on SiGe Nanostructure on Silicon

To address the U.S. Air Force need for novel photoreceivers, Physical Optics Corporation (POC) proposes to develop a new monolithic photoreceiver based on SiGe Nanotechnology with SiMOS process (SIGNMOS) for optical communication. POC is integrating a SiGe quantum dot array photodetector with a CMOS transimpedance amplifier, bringing together the strengths of advanced semiconductor technology with those of novel nanodevices. The SIGNMOS Ge/Si multilayer quantum dot array photodetector covers a broad optical region of the near infrared (NIR) telecommunication wavelength range (1300 to 1550 nm); an on-chip solid state preamplifier matches the photodetector output with the network electronics to operate at 1300 and 1550 nm wavelengths with data transfer at 40 Gbps. In Phase I we will design and develop a SiGe photoreceiver model assembled from discrete components, and determine a path to an integrated design that co-locates the photodetection and signal amplifying circuits close together on the same chip. In Phase II we will develop and test monolithic integrated Ge/Si-CMOS photoreceiver prototype units. Engineering samples will be based on results of Phase II testing.