Q/V/W-band High Powered Amplifiers

This proposal describes the impetus and relevance of the development of SiGe based low-cost and low-power millimeter-wave (mmwave) power amplifier ICs for phased array transmit applications for both the 49-51 GHz band and the 71-78 GHz band. In addition to providing novel mmwave design topologies, this proposal describes a work plan for further analysis, design, and development of a high frequency and high performance SiGe power amplifier technology. Development of millimeter-wave IC components has traditionally proven to be a costly exercise of exotic semiconductor process development and optimization, without much emphasis on innovative circuit design techniques. This has resulted in development of costly compound semiconductor power processes with low manufacturability and yield, and in turned, eliminated the commercial viability of millimeter-wave ICs, most specifically power amplifier ICs. Currently, the cost of millimeter-wave components is one of the major hurdles in deployment of millimeter-wave commercial communications systems, and military radar, communications and electronic warfare systems. VT Silicon is proposing the development of a low cost, and high performance mmwave power amplifier utilizing silicon germanium (SiGe).