High Energy Density Dielectrics for Pulsed Power Capacitors

Aluminum Nitride (AlN)/Oxygen -Doped AlN (O-AlN) possess the unique properties of high dielectric strength, high resistivity, high decomposition temperature, chemical inertness, great hardness and excellent thermal conductivity. In Phase I, we demonstrated that AlN/O-AlN films can be deposited directly onto smooth aluminum surfaces with good adhesion, and that AlN/O-Aln films are highly flexible, making them suitable for the production of wound capacitors. The Phase II research will demonstrate an economical manufacturing technique using a dual magnetron sputtering system with a continuous rolling mechanism for the mass production of rolled capacitors, and will also demonstrate packaged AlN/O-AlN capacitors of high energy density, smaller size, and lower weight as compared to current film capacitors. The main objective of Phase II will involve the assembly and demonstration of a manufacturing operation which combines the AlN/O-AlN deposition system, and the capacitor rolling operation process into a single modular system housed within a 100 square foot area. The whole operation will be assembled within a clean room enclosure. This basic modular fabrication system could then be duplicated for the mass production of capacitors in the Phase III effort.