Maskless Lithography for Fabrication of Microelectronics with 100 nm Features
Award amount
$42,150Program and phase
SBIR · Phase IAward year
2004Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- LUMARRAY, INC.
- Proposal award date
- 2004-01-13
- Contract end date
- 2004-09-05
- UEI
- T2HXT55KVA34
- Solicitation number
- 2003.2
- Topic code
- SB032-045
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Direct-Write Optical Lithography for High-Energy Diffractive Optics
- Computationally Optimized Metamaterial-Based Low-Power Integrated Photonics For Miniaturization And Ultra-Large-Scale Integration
- DIRECT WRITING OF X-RAY GRATINGS USING ZONE-PLATE-ARRAY LITHOGRAPHY (ZPAL)
- Lithography Cost Reduction for Rad Hard Integrated Circuits
- Direct Writing of X-ray Gratings Using Zone-Plate-Array Lithography
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Maskless Lithography for Fabrication of Microelectronics with 100 nm Features
- Maskless Nanolithography with Sub-Pixel Resolution for Microelectronics and Biomolecular Devices
- Subwavelength Maskless All-Light Lithographic System
- Maskless Nanolithography with Sub-Pixel Resolution for Microelectronics and Biomolecular Devices
Research funding history
19 SBIR/STTR records share this UEI (2004–2022). Reported award amounts total $10,200,591. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Energy