SBIR/STTR Research Award
Zinc Oxide-based Spintronic Devices
Award amount
$100,000Program and phase
STTR · Phase IAward year
2004Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- ZN TECHNOLOGY, INC.
- Proposal award date
- 2003-12-08
- Contract end date
- 2004-08-08
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- AF03T020
Research abstract
Zinc oxide is a versatile material, with a wide direct band gap (~3.3eV) with the potential for highly efficient light emitters and detectors, very high radiation hardness, and has high electromechanical coupling coefficients. In addition, transition metal doped ZnO has potential for sprintronics applications. This project will develop the mechanisms for realization of new spintronics devices based on the ZnO material system. Applications for spintronics devices will continue to emerge as their capabilities expand. In the case of ZnO devices, UV lasers with spin-selective transitions for polarized radiation, Modulation of polarization with external bias or magnetic fields, and sensors taking advantage of the properties of ZnO are just a few of the potential applications.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Development of ZnO-GaN hybrid spin LED
- Novel MgZnO-based spintronic materials and devices.
- High Performance ZnO Spintronic devices (Laser and Resonant Tunneling Diodes) With High Switching Speeds and Frequencies